FIELD: technological processes.
SUBSTANCE: use for the MEMS devices sealing. Summary of invention is in the fact that the method comprises the insulating grooves with depth up to buried oxide formation in the instrument layer, MEMS devices formation on the metal instrument layer surface in the eutectic alloy zone and on the contact surfaces, doped polysilicon based capacities formation on the connecting buses and cover plates sealing cover, interlayer dielectric on the sealing cover and the polysilicon second level in the eutectic alloy zone formation, bringing the instrument layer metal into contact with polysilicon on the sealing cover with application of the necessary pressure and temperature for the eutectic alloy formation.
EFFECT: enabling possibility of the sealing simplification and increase in the non-defective products yield.
1 cl, 10 dwg
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