METHOD OF CONNECTING SILICON PLATES Russian patent published in 2024 - IPC B81C3/00 

FIELD: electric elements.

SUBSTANCE: invention can be used for production of sensitive elements used in production of micromechanical accelerometers, microgyroscopes, integral pressure sensors. Essence of the invention consists in the fact that three protective films of silicon nitride, a layer of silicon dioxide are applied to the monocrystalline silicon plate, further, polycrystalline silicon is applied, local masks are formed from the protective films in the region of forming the microprofile and the protective film is etched to the surface of the plate, anisotropic etching is carried out in the formed window of the monocrystalline silicon plate, etching the protective film to the surface of the plate and anisotropic etching the required number of times until the required microprofile is obtained, after the last etching of the side of said silicon plate, it and the other silicon plate are placed on the support surface with the said plates resting on each other, and before thermal splicing, removing the polycrystalline protective film, then removing the silicon nitride protective film, and the surface of contact with it of the silicon plate with the etching pattern is cleaned, and during thermal splicing, said silicon plate with etched sides is connected to other silicon plates from the side in contact with the silicon dioxide layer plate.

EFFECT: enabling reduction of residual internal stresses occurring in monocrystalline silicon and, consequently, improvement of accuracy characteristics of micromechanical sensors.

1 cl, 4 dwg