SEMICONDUCTOR RADIATION SOURCE Russian patent published in 2012 - IPC H01L33/60 

FIELD: physics.

SUBSTANCE: semiconductor radiation source according to the invention has a cylindrical housing, a reflector arranged coaxially inside the housing, a dielectric plate lying inside the reflector, on which there is an array of emitting diodes, an optically transparent cover air-tightly joined to the housing, and a liquid coolant filling the free space of the housing and flowing on the inner surface of the housing, the surface of the reflector and the outer surface of the array of emitting diodes. On the bottom of the housing, the dielectric plate and the semiconductor emitting array there are channels for a liquid distribution system, consisting of, at the bottom of the housing, an annular channel, chord channels connected to the annular channel, and through-holes in the chord channels, the bottom of the housing, the dielectric plate and the semiconductor emitting array, passing in planes lying between columns and on the outer sides of the columns of emitting diodes of the array.

EFFECT: high optical power of the semiconductor radiation source and elimination of non-standard power supplies for said source.

2 dwg