FIELD: processes and equipment for deposition of thin films, possibly used at making magnetic pickups.
SUBSTANCE: method comprises steps of layer-by- layer deposition of magnetic and dielectric materials in vacuum while applying outer magnetic field to deposition plane and heating substrate; further annealing of the whole structure; depositing layers of alloy Fe - Ni at rate no less than 30 Е/s and layers of silica - at rate no less than 250 Е/s in condition of technical vacuum onto substrate heated up to 280 -300 C; annealing prepared structure for 30 min at the same temperature.
EFFECT: enhanced operational characteristics of magnetic field pickup, possibility for making magnetic layers with equal and small coercivity, improved efficiency of method due to reduced operation cycle.
2 tbl, 1 ex
Title | Year | Author | Number |
---|---|---|---|
PROCESS FOR PREPARING MULTILAYER MAGNETIC FILMS | 2004 |
|
RU2315820C2 |
METHOD FOR MANUFACTURING MAGNETORESISTIVE NANOSTRUCTURES | 2021 |
|
RU2767593C1 |
METHOD, AND APPARATUS FOR MULTI-LAYER FILM PRODUCTION AND MULTI-LAYER STRUCTURE PRODUCED BY THEIR MEANS | 2009 |
|
RU2451769C2 |
PRODUCTION OF LAMINAR MAGNETIC FILMS | 2013 |
|
RU2572921C2 |
METHOD OF FORMING MAGNETORESISTIVE MEMORY ELEMENT BASED ON TUNNEL JUNCTION AND STRUCTURE THEREOF | 2012 |
|
RU2522714C2 |
METHOD OF PREPARATION OF QUASI-CRYSTALLINE FILMS ON BASIS OF ALUMINIUM | 2006 |
|
RU2329333C1 |
CMOS/SOI MRAM MEMORY INTEGRATED WITH VLSI AND METHOD FOR PRODUCTION THEREOF (VERSIONS) | 2012 |
|
RU2532589C2 |
MAGNETIC DATA MEDIUM | 0 |
|
SU1718273A1 |
SiO BASE PHOTON CRYSTAL MODIFYING METHOD BY MEANS OF FERROMAGNETIC METALS INCLUSIONS | 2005 |
|
RU2296100C1 |
TUNNEL MAGNETORESISTIVE ELEMENT WITH VORTEX DISTRIBUTION OF MAGNETIZATION IN FREE LAYER AND METHOD FOR ITS MANUFACTURE | 2023 |
|
RU2810638C1 |
Authors
Dates
2004-07-27—Published
2002-08-05—Filed