METHOD, AND APPARATUS FOR MULTI-LAYER FILM PRODUCTION AND MULTI-LAYER STRUCTURE PRODUCED BY THEIR MEANS Russian patent published in 2012 - IPC C23C14/34 C23C14/54 

FIELD: metallurgy.

SUBSTANCE: invention relates to ion-plasma sputtering of multi-layer films. According to the film production method, ion-plasma sputtering of substrate by target material is done in vacuum with application of magnetic field. Preliminarily dependence of material properties of sputtered layer on pressure rating of sputtering gas is determined. Sputtering is done at pressure rating as well as rating and/or orientation of applied magnetic field required for obtaining specified properties of sputtered layer material. Wherein at least two layers are sputtered from one target at different sputtering gas pressures. Apparatus for film production comprises a shielded cathode target and a substrate holder located in horizontal magnetic field with orientation field configured to be changed. The shield is made with adjustable height and at least two openings for sputtering material. Each opening has an insert with adjustable height, and additional vertical wrapped partition.

EFFECT: multi-layer films with different properties of the layers may be produced and manufacturing capability increases.

6 cl, 5 dwg