TUNNEL MAGNETORESISTIVE ELEMENT WITH VORTEX DISTRIBUTION OF MAGNETIZATION IN FREE LAYER AND METHOD FOR ITS MANUFACTURE Russian patent published in 2023 - IPC H01L27/01 

FIELD: electronic technology.

SUBSTANCE: in a tunnel magnetoresistive (TMR) element, the free magnetic layer consists of a textured CoFeB layer (7 nm) immediately adjacent to a tunnel insulating layer of MgO (1.2 nm), and an amorphous CoFeB layer (40 nm) directly in contact with the textured CoFeB layer (7 nm) and providing the possibility of forming a magnetic vortex. A free magnetic layer is formed in two stages, and at the first stage, crystallization of the amorphous layers of CoFeB occurs, and at the second stage, an amorphous layer of CoFeB (40 nm) is applied directly onto the textured CoFeB (7 nm) layer using magnetron sputtering, which makes it possible to form a magnetic vortex. The textured layer provides a high level of TMR effect, the amorphous layer ensures the formation of a magnetic vortex state.

EFFECT: simplification of the process of manufacturing a TMR element while maintaining a high value of the TMR effect.

4 cl, 8 dwg