FIELD: electricity.
SUBSTANCE: method for carrier concentration determination in semiconductors consists in passage of high-frequency current through a transition shifted both in backward and direction directions, receipt of data on carrier concentration at the depletion region depth out of a production of the second harmonic current amplitude and the first harmonic voltage, which is inversely proportional to charge carrier concentration, detection of a surveyed object by scanning at an atomic-force microscope with conducting probe, formation of the barrier contact to the surveyed nano-object by the microscope probe. The device for implementation of the above method comprises 28 elements.
EFFECT: local detection of concentration of free charge carriers in semiconductor micro- and nano-structures.
2 cl, 1 dwg
