METHOD FOR MAKING NANOTUBES Russian patent published in 2004 - IPC

FIELD: nanoelectronics.

SUBSTANCE: method includes application of sacrifice layer onto substrate, on sacrifice layer a layer is formed, which forms nanotube, windows are formed, sacrifice layer is removed while rolling up nanotube, sacrifice layer is made of metal, on which as a layer forming nanotube layers of metals are formed having different thermal extension coefficients and Youngґs modulus. As substrate plate made of semiconductor is used or of 4 group semiconductor, or of silicon. For layer forming nanotube metals are used, thermal extension coefficients of which and Youngґs modulus are different for a value of 5.9·10^-6K^-1 and 30 GPa, respectively, as metals, bimetallic layer of titan and gold is used with total thickness of titan and gold layers from 12 to 100 nm. Layer is rolled up to nanotube having diameter from 400 nm to 20 micrometers.

EFFECT: higher reliability, speed, sensitivity and integration level.

12 cl, 2 dwg, 3 ex