FIELD: photon integrated circuits.
SUBSTANCE: proposed method for producing photon integrated circuits includes stage of mixing quantum wells in mentioned structure, this stage including steps of photoresist formation on structure; photoresist sections are exposed only once in different ways depending on passage of gray mask; passage of mentioned mask is spatially varied depending on desired local degree of mixing of quantum wells; then photoresist is developed.
EFFECT: enhanced economic efficiency and facilitated mixing of quantum wells.
13 cl, 12 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
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|
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| METHOD FOR MANUFACTURING A PLANAR AVALANCHE PHOTODIOD | 2016 |
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| METHOD OF PRODUCING VERTICALLY EMITTING LASER WITH INTRACAVITY CONTACTS AND DIELECTRIC MIRROR | 2016 |
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