FIELD: integral optics.
SUBSTANCE: integral optics device has first and second units made for optical interaction with each other in different, the first and the second, material systems. At least one unit has mixed area of quantum well which takes place within area of interaction between the first and the second units or in close vicinity of the area. First material system has to be the system on the base of semiconductor material of III-V type. The second material system has to be material system which base differs from semiconductor material of III-V type. Method of manufacture of integral optics device provided with hybrid printed circuit is based onto forming of mixed area of quantum well in one -first or second - of the devices. The quantum well belongs to borders of area of interaction between first and second mentioned devices or in close vicinity of this area.
EFFECT: better oscillation-mode mating between active and passive sections; simplified design; lowered loss.
21 cl, 7 dwg
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