FIELD: manufacturing optical devices including semiconductor optoelectronic ones.
SUBSTANCE: proposed method used for manufacturing optical and semiconductor optoelectronic devices, such as laser diodes, optical modulators, optical amplifiers, optical switching units, and optical detectors, involves device manufacture from part of chip of quantum potential well structure including stage of device chip treatment by plasma etching so as to produce elongated defects at least in part of layer covering part of device chip as stage in technology of mixing quantum potential wells for next stage of thermal annealing.
EFFECT: improved process of mixing quantum potential wells.
22 cl, 9 dwg
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