SEMICONDUCTOR LASER UNIT GENERATING HIGH-POWER RADIATION (ALTERNATIVES) AND ITS MANUFACTURING PROCESS Russian patent published in 2006 - IPC H01S5/32 

FIELD: quantum electronics; semiconductor laser manufacture.

SUBSTANCE: applied to n-GaAs substrate in layer-by-layer manner are bottom n-Al_z1Ga_{1 - z1}As layer of shell, bottom light-guide n- or i-In_0.49Ga_0.51P layer, active In_x3Ga_{1 - y3}P_y3 layer with quantum well, top first light-guide i-In_0.49Ga_0.51P layer, sealing GaAs layer, and SiO₂ layer. Then SiO₂ film portion of about 20 μm in width is removed. When SiO₂ film is used as mask, sealing layer disposed close to butt-end surface and first top light-guide layer are removed. After that SiO₂ film, active layer with quantum well disposed close to butt-end surface, and remaining sealing layer are removed. Top p-Al_z1Ga_{1 - z1}As layer of shell and p-GaAs contact layer are deposited on second top p- or i-In_0.49Ga_0.51P layer. Laser radiation is generated in wavelength range of 0.7 - 1.2 μm.

EFFECT: enhanced operating reliability of laser unit at heavy output power.

19 cl, 10 dwg