AVALANCHE PHOTODIODE Russian patent published in 1998 - IPC

FIELD: detection of faint flows of light and nuclear particles. SUBSTANCE: device has semiconductor substrate which surface is covered with semiconductor layer which provides p-n junction with substrate. Boundary between substrate and semiconductor layer has at least two semiconductor regions which conductivity is greater than conductivity of substrate. Characteristic slope of p-n junction inside semiconductor regions is greater than that outside them. EFFECT: increased functional capabilities. 1 dwg