FIELD: semiconductor electronics engineering.
SUBSTANCE: proposed semiconductor device designed for use in semiconductor units that function to amplify and generate superhigh-frequency electromagnetic waves is characterized in that its electron-hole plasma injection elements are periodically disposed in silicon substrate and that its elements are intercoupled by electric fields and current carriers. Active elements of device structure have periodic electron-hole plasma structure whose continuous wave period corresponds to element disposition period.
EFFECT: enhanced reliability of units built around proposed device.
8 cl, 8 dwg
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