SILICON CARBIDE PRODUCTION PROCESS Russian patent published in 2004 - IPC

Abstract RU 2240979 C2

FIELD: abrasive materials.

SUBSTANCE: process comprises high-temperature heating of silicon and carbon-containing raw material, heating being carried out under nitrogen atmosphere at pressure 0.049-0.13 MPa or in nitrogen flow at velocity 0.5-3.3 L/h.

EFFECT: increased purity and yield of product.

4 ex

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RU 2 240 979 C2

Authors

Timoshchuk T.A.

Dates

2004-11-27Published

2002-10-02Filed