FIELD: measuring parameters of gate insulator.
SUBSTANCE: proposed method includes evaluation of set of parameters of many MIS structures on entire wafer within its single trace, measurement of pre-breakdown current-voltage characteristic of MIS structure, breakdown voltage of gate insulator and charge injected in gate dielectric before its irreversible breakdown in single measurement process. Thus, electrophysical parameters of MIS structure are determined within singe measurement cycle.
EFFECT: reduced time taken to measure characteristics of gate insulator on wafer.
1 cl, 2 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| PHOTOSENSITIVE CELL | 1991 |
|
RU2022410C1 |
| METHOD FOR MANUFACTURING MIS TRANSISTORS | 2002 |
|
RU2206142C1 |
| METHOD OF DETERMINATION OF SMALL DOSES OF ION DOPING | 0 |
|
SU1786542A1 |
| MATRIX OF SILICON-INSULATOR METAL-INSULATOR-SEMICONDUCTOR TRANSISTOR | 1991 |
|
RU2012948C1 |
| METHOD FOR COULOMETRIC MEASUREMENT OF ELECTRIC PARAMETERS FOR n-MOS TRANSISTORS NANOSTRUCTURES IN TECHNOLOGIES OF COMPLEMENTARY MOS LOGIC (CMOS)/SILICONE-ON- INSULATOR | 2010 |
|
RU2439745C1 |
| METHOD FOR SEMICONDUCTING SILICON CARBIDE ELEMENT PRODUCTION | 2015 |
|
RU2613013C1 |
| FIELD-EFFECT NANOTRANSISTOR | 2003 |
|
RU2250535C1 |
| METHOD FOR ENHANCING RADIATION RESISTANCE OF CMOS CIRCUIT COMPONENTS ON SOI SUBSTRATE | 2003 |
|
RU2320049C2 |
| METHOD DETERMINING SURFACE BENDING ψs OF ZONES OF SEMICONDUCTOR IN MIS STRUCTURE | 1997 |
|
RU2117956C1 |
| METHOD OF CONTROLLING OPERATION OF A METAL-INSULATOR-SEMICONDUCTOR MEMBRANE CAPACITOR STRUCTURE | 2018 |
|
RU2706197C1 |
