METHOD FOR SEMICONDUCTING SILICON CARBIDE ELEMENT PRODUCTION Russian patent published in 2017 - IPC H01L21/265 

FIELD: physics, instrumentation.

SUBSTANCE: invention refers to microelectronics and can be used in electronic devices manufacturing technology based on silicon carbide (SiC), for example, MIS transistors with improved performance. The method for silicon carbide semiconducting element production incudes phosphorus ions administering in the SiC substrate by ion implantation, and further formation of a SiO₂ layer thereon, implantation of phosphorus ions is performed with ion energy in the rangen of 0.1-50 keV and ion dose in the range of 10¹²-10¹⁵ cm^-2 , and the layer of SiO₂ is formed by deposition and then the resultant structure is annealed. The SiO₂ layer formed by deposition may have a thickness of 25-100 nm, and annealing of the resultant structure may be carried out in a dry or wet oxygen atmosphere or in an inert gas atmosphere with a partial pressure of oxygen at a temperature of 900-1250°C for 1-180 min.

EFFECT: invention allows to increase reliability and service life of the semiconducting silicon carbide element while reducing time and cost of its production.

6 cl, 1 dwg, 1 tbl