METHOD FOR COULOMETRIC MEASUREMENT OF ELECTRIC PARAMETERS FOR n-MOS TRANSISTORS NANOSTRUCTURES IN TECHNOLOGIES OF COMPLEMENTARY MOS LOGIC (CMOS)/SILICONE-ON- INSULATOR Russian patent published in 2012 - IPC H01L21/66 B82B3/00 

FIELD: electricity.

SUBSTANCE: method of electric and physical parameters measurement of n-MOS transistor nanostructures in technologies of CMOS/ silicone-on-insulator works in the following way: supply to the gate of rectangular voltage impulse with positive polarity and length of monitoring pulse τ, value of voltage impulse U_p and testing of current passing through measuring resistance R_H serially connected between impulse voltage source and transistor gate included into capacitor mode of metal-insulator-semiconductor (MIS) structure, test crystal is included into MOS transistor and photoconductive cell with preset values; value of measuring resistance R_H is limited to 75 kOhm, length of voltage impulse is limited up to value of 6 - 10 ms, pulse amplitude of generator is selected from conditions for dependence of voltage drop U_R at measuring resistance in time at five specific areas with amplitude of A_i and time of t_i completion; concentration of charge carriers in buffer layer, surface concentration p_s of charge carriers and volume concentration of charge carriers, value of effective mobility of charge carriers are determined on the basis of specified ratios.

EFFECT: pulse coulonometric measurement of electric and physical parameters by results of analysis at impact of rectangular voltage impulse on MIS-capacitor at duration of measurement cycle less than 1 s.

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