SEMICONDUCTOR DEVICE WITH BUILT-IN CONTACTS (VERSIONS) AND METHOD OF MAKING SEMICONDUCTOR DEVICES WITH BUILT-IN CONTACTS (VERSIONS) Russian patent published in 2010 - IPC H01L33/32 

FIELD: physics.

SUBSTANCE: invention discloses a semiconductor device which contains: a substrate; a first contact; a first layer of doped semiconductor material deposited on the substrate; a semiconductor junction area deposited on the first layer; a second layer of doped semiconductor material deposited on the junction area, where this second layer has opposite extrinsic conductivity to the first layer; and a second contact; the second contact is electrically connected to the first layer, and the first contact is built into the semiconductor device between the substrate and the junction area and is electrically connected to the first layer. Two more versions of such a semiconductor device are also proposed, as well as two methods of making a semiconductor with built-in contacts. If part of hidden contacts can be held free from the deposited material, there will be no need for photolithography in making such a device. A mask can be used to prevent deposition on the surface of the contact. Production of a wide range of such devices can be possible, depending on other operational constraints such as current, voltage and heat dissipation.

EFFECT: significantly low series resistance between electric contacts of such a device, resulting in high operational efficiency and low heating of the device.

40 cl, 13 dwg