WHITE LUMINANCE LIGHT-EMITTING DIODE BASED ON NITRIDES OF GROUP III ELEMENTS Russian patent published in 2010 - IPC H01L33/06 H01L33/30 

FIELD: physics, semiconductors.

SUBSTANCE: invention relates to optoelectronics. The white luminance light-emitting diode has an n-type semiconductor layer, one or more structures with quantum wells formed above the n-type semiconductor layer, a p-type semiconductor layer formed on the structure with quantum wells, a first electrode formed on the p-type semiconductor and a second electrode formed on at least part of the n-type semiconductor layer. Each structure with quantum wells includes a quantum well In_xGa_1-xN layer, an In_yGa_1-yN (x>0.3 or x=0.3) barrier layer and In_zGa_1-zN quantum dots, where x<y<z≤1. Two versions of light-emitting diodes and two versions of structures with quantum wells are proposed in the invention.

EFFECT: invention enables to make while luminance light-emitting diodes which are easy to make, have good light output and colour transfer characteristics, and also have the required reliability for such applications as illumination light sources and liquid-crystal display devices (displays).

22 cl, 5 dwg