STRUCTURE FOR GENERATING SUB-TERAHERTZ AND TERAHERTZ RANGE ELECTROMAGNETIC RADIATION Russian patent published in 2013 - IPC H01L33/30 

FIELD: radio engineering, communication.

SUBSTANCE: heterojunction structure according to the invention is a plurality of alternating pairs of narrow-bandgap (GaAs or GaN) and wide-bandgap (respectively, Ga_1-x Al_x As or Ga_1-xAl_xN) semiconductor layers. The thickness of the alternating narrow-bandgap and wide-bandgap layers is selected to be identical in the 30…100 nm range; the narrow-bandgap GaAs and GaN layers of the multilayer heterostructure are doped with donors to concentration of 5·10¹⁷…1·10¹⁸ cm^-3 and the wide-bandgap Ga_1-xAl_xAs and Ga_1-xAl_xN layers are not doped; the number of periods of pairs of alternating GaAs and Ga_1-x Al_x As (and, respectively, GaN and Ga_1-xAl_xN) layers of the multilayer heterostructure is selected from three to several tens; the molar ratio of aluminium arsenide for all gallium arsenide - aluminium arsenide layers is selected in the range of 0.20…0.35, and the molar ratio of aluminium nitride for all gallium nitride - aluminium nitride layers is selected in the range of 0.35…0.65; wherein in the Ga_1-x Al_x As (for the GaAs-AlAs system) layer and in the Ga_1-xAl_xN (for the GaN-AIN system) layer from the pair furthest from the substrate, the molar ratio of aluminium arsenide (respectively, aluminium nitride) is low and is about 0.7·X, and the layer itself is coated with a thicker (not more than 150 nm) doped GaAs (respectively, GaN) layer. A version of the disclosed structure can be a structure in which in a layer of a solid solution from the pair closest to the substrate, the molar ratio of aluminium arsenide (respectively, aluminium nitride) is (0.65…0.75)·X.

EFFECT: significant increase in power of solid-state sub-terahertz and terahertz radiation generators.

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