METHOD FOR ONE-SIDED GRINDING OF SILICON CARBIDE PLATES WITH A FREE ABRASIVE Russian patent published in 2023 - IPC B24B37/04 H01L21/302 B24B1/00 

FIELD: semiconductor industry.

SUBSTANCE: invention relates to the machining of plates made of semiconductor materials and can be used in the manufacture of diodes, transistors and microcircuits. Mechanical processing of the plates is carried out to thin them in order to reduce their thermal and electrical resistance. The method includes gluing the processed silicon carbide plates and additional plates on the surface of the plane-parallel head, the placement of the plane-parallel head on the grinder and the supply of free abrasive. As additional plates, silicon plates are used, the diameter of which is equal to the diameter of the processed silicon carbide plates. First, additional silicon plates are glued to the plane-parallel head and their grinding is carried out to a value 0.01 mm greater than the thickness of the processed silicon carbide plates. Then, the processed silicon carbide plates are glued and the glued silicon carbide plates and additional plates are polished to a predetermined degree of thinning of the silicon carbide plates.

EFFECT: plate manufacturing is simplified, the quality of grinding is improved.

1 cl, 4 dwg