FIELD: semiconductor technology.
SUBSTANCE: invention relates to semiconductor technology, it can be used in the manufacture of photo-converters. The method of processing semiconductor structures with a germanium substrate includes fixing the semiconductor structure with the front side on the carrier disk by means of an adhesive connection, thinning the substrate, dividing the semiconductor structure into chips, spraying the back metallization with heating of the substrate, removing the metallized chips from the carrier disk, while fixing the semiconductor structure on the carrier disk is performed on protrusions having the form of strips fixed vertically on the carrier disk, wherein the carrier disk and the protrusions are made of materials with thermal expansion coefficients close to the germanium substrate, and the protrusions are located on the inner side of the separation contour of the semiconductor structure, which is fixed on the protrusions by means of an epoxide-plastisol mixture.
EFFECT: invention makes it possible to increase the yield of suitable photo-converters by eliminating the traumatic factors of mechanical impact on the semiconductor structure in the process of performing technological operations; in addition, it provides effective removal of chips from the carrier disk in an organic solvent and, as a result, repeated use of carrier disks.
1 cl, 6 dwg
