FIELD: semiconductor equipment. SUBSTANCE: process of thinning includes mechanical working and polishing etching. Nonflatness is measured after each operation. Then cycle is repeated. Last mechanical working is performed at depth not exceeding 50 μm. Last polishing etching is conducted to depth providing for increase of 2.0-5.0 times of inflatness relative to preceding mechanical working. EFFECT: improved efficiency of thinning.
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURES | 2003 |
|
RU2258978C2 |
| METHOD FOR COMBINED CHEMICAL AND MECHANICAL POLISHING OF PLATES FROM GALLIUM ARSENIDE | 1990 |
|
RU1715133C |
| PRODUCTION OF SEMICONDUCTOR MICROWAVE DEVICES | 2013 |
|
RU2546856C2 |
| METHOD FOR PROCESSING SEMICONDUCTOR STRUCTURES WITH A GERMANIUM SUBSTRATE | 2019 |
|
RU2755415C2 |
| METHOD FOR MANUFACTURING A PHOTOCONVERTER ON A GERMANIUM SOLDERED SUBSTRATE AND A DEVICE FOR ITS IMPLEMENTATION | 2019 |
|
RU2703840C1 |
| METHOD OF TREATING SURFACE OF PLATES OF INDIUM ANTIMONIDE (100) | 2023 |
|
RU2818690C1 |
| PROCESS FORMING MEMBRANES IN MONOCRYSTALLINE SILICON SUBSTRATE | 1995 |
|
RU2099813C1 |
| METHOD OF MANUFACTURING THE LIMITER MODULE AT THE COUNTER-SWITCHED P-I-N STRUCTURES | 2016 |
|
RU2622491C1 |
| METHOD OF THINNING PLATES CONTAINING CRYSTALS OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS | 0 |
|
SU1787295A3 |
| METHOD FOR MANUFACTURING SILICON-ON-INSULATOR STRUCTURE | 1999 |
|
RU2173914C1 |
