METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURES Russian patent published in 2005 - IPC

FIELD: semiconductor engineering.

SUBSTANCE: proposed method used for producing super-thin semiconductor structures whose substrate is about 6 to 50 μm thick includes formation of at least two structures on semiconductor wafer bearing separation reference marks spaced S_p apart; manufacture of structure carriers in the form of rings and inserts disposed inside carriers; their attachment to carrier; structure thinning to desired definite thickness of non-working side by mechanical treatment, and wafer cutting along reference marks into structure-bearing blanks, structure carriers having outer diameter D_out ≤ S_p, m and inner diameter D_in = (1.05 ... 1.5) (a² + b²)^1/2, where a and b are structure sizes, m; wafer cutting along reference marks into structure-bearing blanks; calibration of the latter to diameter equal to outer diameter of annular carrier, whereupon working side of structure-bearing blank is attached to carrier with insert followed by equalizing thicknesses of carrier and insert; then structures are thinned by mechanical treatment and polishing etching, and inserts are removed.

EFFECT: enhanced quality and precision of semiconductor structure treatment.

1 cl, 5 dwg