POWERFUL SEMICONDUCTOR DEVICE Russian patent published in 2005 - IPC

FIELD: semiconductors.

SUBSTANCE: in a powerful semiconductor device, crystal producing heat is mounted by metallic contact zones of face side on appropriately metal-covered lower heat drain with use of heat-conductive layer, and all contact areas of crystal are resiliently pressed to upper and lower heat-drains by its pressurizing lid. Heat drain from active crystal is performed from its face and check sides, while from face side with use of heat-conductive layer placed between active zone of crystal face side and lower heat drain, and body pressurization and resilient compression of crystal to metal-covered contact zones of body are realized by heat-draining lid of body.

EFFECT: better overall parameters, higher reliability, simplified construction.

5 dwg