POWERFUL MICROWAVE FIELD TRANSISTOR Russian patent published in 2023 - IPC H01L29/812 

FIELD: microwave field-effect transistors.

SUBSTANCE: powerful microwave field-effect transistor is claimed, containing a semi-insulating semiconductor substrate, on the front side of which a given structure of semiconductor layers based on gallium arsenide is made, on the front side of which there is at least one given topology of the passive and active regions of the field-effect transistor, the latter is a sequence of elements - single source, gate, drain electrodes, each with corresponding contact pads, a conductive channel with a groove between each pair of single source-drain electrodes for each single gate electrode, while the single electrodes of the same name - source, gate, drain are electrically connected. In which, on the surface of a given topology of the passive and active regions of the field-effect transistor or on the surface of a given topology of the passive region and on the surface of individual elements of a given topology of the active region, in their various combinations, a highly thermally conductive coating is made of a highly thermally conductive material with thermal conductivity k, thickness H, and the product of thermal conductivity k and thickness H is more than 10^-4 W/K.

EFFECT: increase in specific output power, output power, gain, durability, expansion of functionality.

8 cl, 3 dwg