SEMICONDUCTOR RADIATION SOURCE Russian patent published in 2014 - IPC H01L27/15 H01L25/75 

FIELD: physics, optics.

SUBSTANCE: invention relates to optoelectronics and specifically to semiconductor infrared, visible and ultraviolet radiation sources. The invention can be used in designing modern lighting equipment and systems. The invention can also be used in microwave microelectronics when designing monolithic power amplifiers and in power electronics when designing monolithic converters. In a semiconductor radiation source, a radiation-generating monolithic array of p-n mesostructures on a heat-conducting dielectric substrate is placed inside a chip holder which is made in form of a device with high rate of removing heat from the chip and transmitting said heat to the entire structure of the chip holder. The chip holder, having a dielectric cover soldered with a metal base, along with the array of p-n meostructures inserted into the window of the dielectric cover and connected thereto by soldering on the edges of the window, forms an airtight cavity which is partially filled with a capillary-porous material. A single network of capillary channels is formed on the back surface of the substrate of the chip and the adjoining inner surface of the dielectric cover. The is enables multifold reduction of thermal resistance of the semiconductor radiation source and provides uniform temperature distribution across the area of the chip. Input contacts which allow reliable and easy mounting of the article are formed on the surface of the dielectric cover.

EFFECT: invention reduces thermal resistance of the radiation source and increases radiation power of the radiation source, enables to design a radiation source which enables to produce lighting equipment with a large radiation area and compactly arranged light-emitting arrays; also, dense arrangement of elementary radiation sources solves the task of making a radiation source with the highest radiation power density (brightness).

3 cl, 2 dwg