FIELD: nondestructive inspections in microelectronics for quality control of silicon-on-sapphire layers of devices.
SUBSTANCE: proposed method used to inspect epitaxial silicon layers grown on insulating substrates for structural perfection includes ellipsometric measurements of film refractive index at different positions of structure adjusted by rotating it about normal to surface; measurement results are used to evaluate coefficient of anisotropy A = 1 - nmax/nmin, where nmax, nmin are maximal and minimal refractive indices, respectively. Degree of film unsoundness is judged by coefficient of anisotropy.
EFFECT: enhanced sensitivity of ellipsometric flaw inspection method.
1 cl, 1 tbl
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| METHOD TO CONTROL DEFECT STRUCTURE OF EPITAXIAL SILICON LAYERS ON DIELECTRIC SUBSTRATES | 2012 |
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| METHOD FOR FLAW INSPECTION OF SILICON FILMS ON INSULATING SUBSTRATES | 2000 |
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| METHOD FOR ELLIPSOMETRIC CONTROL OF TOPOGRAPHICAL RELIEF, MECHANICAL STRESS AND DEFECTIVE FILM ON THE SUBSTRATE | 2020 |
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| METHOD FOR TREATMENT OF SILICON-ON-SAPPHIRE STRUCTURES | 2000 |
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| METHOD OF TEST FOR DEFECTS OF SILICON DIOXIDE FILMS ON SILICON BACKINGS | 1991 |
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| FLAW INSPECTION METHOD FOR INSULATING FILMS OF SEMICONDUCTOR STRUCTURES | 1995 |
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| INSULATING FILM SERVICEABILITY CHECK METHOD | 1999 |
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