METHOD OF TEST FOR DEFECTS OF SILICON DIOXIDE FILMS ON SILICON BACKINGS Russian patent published in 1995 - IPC

Abstract RU 2033660 C1

FIELD: microelectronics. SUBSTANCE: index of refraction is measured under normal conditions. Then index of refraction is measured additionally when structure is heated up to temperature 350-400 K and kept at this temperature for the course of 30-40 min. Film which index of refraction does not change is considered free of defects. EFFECT: improved authenticity of method. 2 tbl

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RU 2 033 660 C1

Authors

Vinogradov A.S.

Gudenko B.V.

Orlovskaja S.A.

Skupov V.D.

Dates

1995-04-20—Published

1991-12-10—Filed