FIELD: semiconductor electronics.
SUBSTANCE: method for producing monocrystals by crucible -free zone melting comprises steps of creating melt zone by induction heating of monocrystal; realizing electromagnetic agitation of melt and subjecting monocrystal in addition to action of ultrasonic oscillations with frequency 18 - 20 kHz and intensity 0.3 - 0.6 Wt/cm2.
EFFECT: enhanced uniformity of additive distribution along cross section of monocrystal, increased yield of high-quality devices.
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