FIELD: metallurgy.
SUBSTANCE: invention relates to nonferrous metals metallurgy field and can be used at manufacturing of sputtering metallic targets for application of thin-film metallization super large scale integration circuit of different purposes in microelectronics. Manufacturing method of sputtering target consists in usage of liquid-phase synthesis of silicon components and refractory metal for receiving of stoichiometric disilicides of refractory metals optimal structure and as-cast composition (not in the form of powders). Then it is implemented magnetron sputtering of framework-specific target, providing films formation of disilicide with required composition. Method proposes, that in disilicide ingots silicon content corresponds to eutectic concentration. Facility for method implementation contains target from silicon components and refractory metal, additionally, sputtered cylindrical or rectangular plate of target corresponds mosaic structure, gathered from ingots of high-clean disilicide of refractory metal, fixed on the copper basis by means of ultrasonic brasing. Facility also can consist of one or several disilicide ingots of refractory metal of cylindric section, if sputtering is implemented by point source (laser, electronic beam).
EFFECT: improvement and increasing of reliability of barrier and conducting films of disilicide of refractory metal (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Ni, Co) by means of usage for sputtering high purity cast materials.
4 cl, 4 tbl, 2 dwg
