HIGH-POWER SHF FIELD-EFFECT TRANSISTOR Russian patent published in 2015 - IPC H01L29/80 B82B1/00 

FIELD: electricity.

SUBSTANCE: in high-power SHF FET at semiconductor heterostructure the semiconductor heterostructure is made as sequence of the following basic layers: at least one buffer layer of GaAs with thickness of at least of 200 nm, a group of conducting layers, which form FET channel, represented by channel layer of In_yGa_1-yAs with thickness of 12-20 nm and at least two δn-layers doped with donor dopant, and two spacer i-layers of Al_xGa_1-xAs with thickness of 1-3 nm each, two groups of barrier layers of Al_xGa_1-xAs, one of them is placed at one side of the group of conducting layers while the other gating group is placed at the opposite side. The substrate group of barrier layers is made as acceptor-donor p-i-δn system of barrier layers; the gating group of barrier layers is made as acceptor-donor δn-i-p system of barrier layers. In each group of barrier layers i-layer is made with thickness of 0.5-10 nm, p-layer is made with doping level complying with height of potential barriers of 0.4-0.8 width of forbidden-gap width of Al_xGa_1-xAs, δn-layer is made with excessive doping level ensuring difference in surface density for donor and acceptor dopant equal to (1-10)×10¹² cm^-2.

EFFECT: increased output power and amplification coefficient.

3 cl, 2 dwg, 1 tbl