FIELD: microelectronics. SUBSTANCE: method includes introduction of source gas into vacuum chamber and its decomposition using inductively coupled high-frequency plasma generated due to high-frequency energy supply and deposition of desired thin semiconductor film on substrate by chemical evaporation of steam using decomposed source gas wherein crystallization conditions for thin semiconductor film being deposited are controlled by controlling heating temperature of substrate in the course of film deposition process. Device implementing proposed method has means providing for controlled deposition of film. EFFECT: enhanced quality of thin semiconductor film obtained at low temperature with adequate control of crystallization process. 22 cl, 6 dwg
