FIELD: measuring equipment.
SUBSTANCE: device has at least one fixed electrode 3 and at least one moving electrode 6,7, electrically insulated and at distance 10 from said electrode 3. portion of moving electrode 6,7 is made of porous layer 6 of polycrystalline silicon, while said layer in fully assembled component remains as integral portion of said flexible electrode 6,7.
EFFECT: possible compensation of temperature deviation and dependence of moisture level of environment.
2 cl, 8 dwg, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| DETECTOR ELEMENT OF CAPACITANCE PRESSURE SENSOR FOR LIQUID AND GASEOUS MEDIA AND ITS MANUFACTURING TECHNIQUE | 2006 |
|
RU2324159C1 |
| PROCESS OF MANUFACTURE OF MICROMECHANICAL INSTRUMENTS | 1998 |
|
RU2137249C1 |
| CAPACITIVE PRESSURE TRANSDUCER AND PROCESS OF ITS MANUFACTURE | 1995 |
|
RU2171455C2 |
| MEMS DEVICES SEALING METHOD | 2017 |
|
RU2662061C1 |
| INTEGRATED TRANSDUCER MANUFACTURING PROCESS | 1996 |
|
RU2123220C1 |
| THIN-FILM DETECTOR FOR PRESENCE DETECTION | 2008 |
|
RU2475892C2 |
| SEMICONDUCTOR SANDWICH-STRUCTURE 3C-SiC/Si, METHOD OF ITS PRODUCION AND MEMBRANE-TYPE SENSITIVE ELEMENT INCORPORATING SAID STRUCTURE | 2008 |
|
RU2395867C2 |
| CAPACITANCE STRAIN GAUGE | 2020 |
|
RU2759176C1 |
| CAPACITANCE STRAIN GAUGE | 2020 |
|
RU2759175C1 |
| METHOD OF MICRO-PROFILING OF SILICON STRUCTURES | 2014 |
|
RU2559336C1 |
