INTEGRATED TRANSDUCER MANUFACTURING PROCESS Russian patent published in 1998 - IPC

Abstract RU 2123220 C1

FIELD: integrated transducers. SUBSTANCE: manufacturing process for integrated transducer having micromechanical polycrystalline-silicon surface structure includes formation of connections between mentioned structure and circuit on single-crystalline silicon substrate by evaporating highly doped polycrystalline silicon layer, photolithography, and etching of structure on supporting layer, its thermal treatment at 1100-1200 C, formation of active circuit components, metallization, passivation, and removal of supporting layer. EFFECT: improved response to mechanical effects. 12 dwg

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RU 2 123 220 C1

Authors

Godovitsyn I.V.

Shelepin N.A.

Parmenov Ju.A.

Dates

1998-12-10Published

1996-10-07Filed