FIELD: physics.
SUBSTANCE: proposed structure comprises successively arranged silicon substrate with base orientation (100), layer of nano-porous 50 to 180 nm-thick silicon layer produced by chemical etching of substrate and layer 3C-SiC applied with substitution of hydrogen by carbon in surface bonds of Si-C of porous silicon layer. Proposed invention covers also method of produced above described sandwich structure and membrane-type sensitive element.
EFFECT: increased reverse breakage voltage and mobility of charge carriers in semiconductor sandwich structure.
3 cl, 4 dwg, 3 tbl
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