FIELD: production of refractory articles. SUBSTANCE: method involves the steps of: applying silicon melt supplied through a member with capillary structure at temperature of an article to be impregnated of 1260-1400 degrees C and a temperature of the melt of 1430-1700 degrees C and keeping the article, cooling at axial temperature gradient in the article of 25-60 degrees C/m. Device for impregnating hollow articles with silicon has a hermetically sealed chamber, cylindrical resistive heater, crucible, feeder mounted in the chamber. The feeder is made of material with capillary structure. The device furthermore is provided with a support and shield, the shield thickness being variable in height and determined from the expression given in the invention description. EFFECT: enhanced efficiency. 2 cl, 1 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF IMPREGNATION WITH SILICON OF HOLLOW ARTICLES FROM POROUS MATERIAL CONTAINING SILICON CARBIDE AND DEVICE FOR ITS IMPLEMENTATION | 2015 |
|
RU2623391C2 |
| METHOD OF PRODUCING FULL RESISTANCE HEATERS ON THE BASIS OF CARBON-CYBER-BICYCLE MATERIAL | 2016 |
|
RU2620688C1 |
| DEVICE FOR GROWING OF SILICON LAYERS ON CARBONIC SUBSTRATUM | 2008 |
|
RU2365684C1 |
| DEVICE FOR CONTINUOUS GROWING OF ORIENTED LAYERS OF SILICON ON A CARBON FABRIC | 2004 |
|
RU2264483C1 |
| METHOD FOR GROWING GERMANIUM OR SILICON SINGLE CRYSTALS AND A DEVICE FOR ITS IMPLEMENTATION | 2022 |
|
RU2791643C1 |
| DEVICE FOR CONTINUOUS GROWTH OF TWO-SIDED SILICON LAYERS ON CARBON FOIL | 2006 |
|
RU2332530C1 |
| METHOD FOR GROWING SILICON MONO-CRYSTAL FROM MELT | 2003 |
|
RU2241078C1 |
| GROWING TECHNIQUE OF SINGLE-CRYSTAL SILICON FROM MELT | 2007 |
|
RU2342473C1 |
| METHOD OF MANUFACTURING PRODUCTS FROM CARBON-SILICON CARBIDE MATERIAL | 2011 |
|
RU2469950C1 |
| DEVICE FOR GROWING SAPPHIRE MONO-CRYSTALS | 2003 |
|
RU2227821C1 |
