PROCESS OF MANUFACTURE OF MESOTAXIAL LAYERS OF COBALT DISILICIDE IN SILICON Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: process relates to technology of manufacture of semiconductor devices and integrated circuits. In compliance with it polished silicon plates are anchored on noncooled duralumin cassette. Ion implantation with ions of cobalt with energy 90 keV, dosage 2·10¹⁷cm² and density of ion current exceeding 40 A/sq.cm is performed in vacuum chamber. In this case layer with lattice constant 0.5365 nm and thickness about 60 nm is manufactured. EFFECT: facilitated manufacture.