FIELD: nanoelectronics, microelectronics; microelectronic and microelectromechanical systems; manufacture of micro- and nanoprocessors and nanocomputers.
SUBSTANCE: proposed method consists in bringing the electrode to substrate surface, after which electrostatic potential which is negative relative to substrate surface point is fed to electrode; substrate is preliminarily placed in damp atmosphere and water adsorption film is formed on its surface, after which electrode is brought to substrate surface in such way that water adsorption film wets electrode; electrode is brought in contact with substrate surface; simultaneously with feed of electrostatic potential to electrode and electrode is subjected to pressure relative to substrate surface.
EFFECT: increased penetration into substrate volume (from 10 nm to 50 nm) of dielectric sections of oxide films.
17 cl, 3 dwg, 5 ex
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