METHOD OF PRODUCING GERMANIUM FILMS Russian patent published in 2008 - IPC H01L21/20 

FIELD: electrical engineering.

SUBSTANCE: method relates to solid state processes and can be used in producing micro-, nano-processors and nano-computers. The proposed method consists in the following: a 5 to 100nm-thick GeO film is formed on the substrate, the needle electrode is brought into contact with the said formed GeO-film for the 6 to 40 V-electrostatic potential positive relative to the film surface is applied for 10^{-5 t} to 10 s. Here note that the aforesaid needle electrode is pressed to the film, the force applied making 10⁵ to 10⁹ N/m². Note also the force is applied intermittently, i.e. by bringing the needle electrode into contact with the film surface some 1 to 10⁶ times during the period of applying the said electrostatic potential. Thereafter the needle electrode is brought into contact with the other points of the said film to form a nano-structured GeO film made up of locally-modified areas.

EFFECT: smaller sizes of produced structured germanium films.

10 cl, 4 dwg