METHOD FOR PRODUCING OF MIS STRUCTURES ON BASIS OF InAs Russian patent published in 2017 - IPC H01L21/3105 

FIELD: electricity.

SUBSTANCE: invention relates to technologies of manufacture of semiconductor devices and can be used in producing of MIS structures, based on InAs. InAs substrate is subjected to pretreatment consisting of cleaning the surface from dirt and native oxide. After that, on the substrate in the vacuum chamber the forming of dielectric layer is performed by means of anodic oxidation of the substrate - anodizing the substrate working surface in plasma. Upon completion of anodization the dielectric layer is sputtered by the layer of metal. The pretreatment is performed under the conditions that ensure the complete cleaning the surface from contaminants and natural oxide, with the achievement of stability and inertness of the working surface in absence of exposure to oxidizing environment, and plasma. Anodizing is performed using an oxidizing gas environment with the composition Ar:O₂:CF₄ in the ratio (80-x)%: 20% : x%, where x - amount of CF₄, equal to 5% - 20%. The plasma is a Townsend discharge plasma in normal and in transient of its combustion. In this case the substrate is placed at a distance from the cathode, selected subject to the conditions of stationary gas-discharge plasma. The pressure of the oxidizing gas environment is maintained to provide the stable combustion of discharge with formation in the discharge gap of laterally homogeneous discharge.

EFFECT: decrease of the value of embedded charge is provided down to less than 5×10¹¹ cm^-2, improvement of uniformity by thickness and the chemical composition of the dielectric layer over a larger area of the original plate.

13 cl, 4 dwg