FIELD: producing infrared radiation sensing single- and multiple-component photodiodes on indium antimonide.
SUBSTANCE: proposed method for producing photodiode on indium antimonide includes sequential formation of local p-n junction on substrate, insulating film by anode oxidation, passivating film, and contact pads, anode oxidation being conducted in electrolyte of following composition: 45-55 volume percent of ammonium persulfate [(NH4)2S2O8] in amount of 0.05 m/l dissolved in glycerin; 45-55 volume percent of dimethyl formamide under electrostatic conditions conducted in at least two stages, current density being reduced every next stage. Thermal stability of photodiodes on InSb produced in this way is enhanced by 40-50 °C.
EFFECT: enhanced reliability of proposed photodiodes at high breakdown voltage level.
2 cl, 1 dwg
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