PROCESS OF MANUFACTURE OF MULTILAYER THIN-FILM RESISTORS Russian patent published in 2000 - IPC

Abstract RU 2145744 C1

FIELD: radio engineering, electronics. SUBSTANCE: invention is related to manufacture of articles with film resistive elements. Two or more resistive layers of same material are deposited one after another on dielectric substrate. Thermal treatment of preceding layers is conducted before each deposition of due resistive layer, configuration of resistors and contacts is formed, then cyclical thermal treatment is carried out in the course of 25-30 min by way of sequential placement and curing of substrate in liquid nitrogen, organic solvent and in air. Time of holding for each operation is equal to 30-60 s. EFFECT: increased reproducibility of key parameters of resistive elements, expanded technological capabilities in unification of conditions of deposition and treatment of resistive layers. 1 tbl

Similar patents RU2145744C1

Title Year Author Number
PROCESS OF MANUFACTURE OF FILM RESISTORS 1992
  • Skupov V.D.
  • Smolin V.K.
RU2046419C1
METHOD FOR MANUFACTURING THIN-FILM RESISTORS 2000
  • Smolin V.K.
RU2207644C2
TECHNOLOGY OF MANUFACTURE OF FILM RESISTORS 2000
  • Smolin V.K.
  • Kondrashevskij V.P.
RU2183876C2
METHOD OF MANUFACTURE OF FILM RESISTORS 1996
  • Skupov V.D.
  • Smolin V.K.
RU2109360C1
MANUFACTURING TECHNIQUE FOR SILICON-ON-SILICON DIOXIDE FILM STRUCTURE 1996
  • Skupov V.D.
  • Smolin V.K.
RU2128382C1
METHOD FOR PRODUCING THIN-FILM RESISTORS 2004
  • Smolin Valentin Konstantinovich
RU2270490C1
METHOD FOR TREATMENT OF SILICON-ON-SAPPHIRE STRUCTURES 2000
  • Skupov V.D.
  • Smolin V.K.
RU2185685C2
PROCESS OF FORMATION OF FILM ELEMENTS ON BASE OF PLATINUM 1996
  • Smolin V.K.
  • Kondrashevskij V.P.
RU2110112C1
METHOD FOR TREATMENT OF SINGLE-CRYSTALLINE SILICON PLATES 1996
  • Skupov V.D.
  • Gusev V.K.
  • Smolin V.K.
RU2119693C1
SILICON-ON-INSULATOR STRUCTURE TREATMENT METHOD 2000
  • Skupov V.D.
  • Smolin V.K.
RU2193257C2

RU 2 145 744 C1

Authors

Smolin V.K.

Utkin V.P.

Dates

2000-02-20Published

1998-03-30Filed