FIELD: heat treatment technology.
SUBSTANCE: invention relates to a technology for heat treatment of metal, semiconductor substrates and amorphous films. The device contains a housing with thermal insulation placed inside it, a substrate holder and a heater, the heater contains two remotely located quartz rings, around which cylindrical tubes are located around the circumference, tightly adjacent to each other, through which a wire of heat-resistant materials is drawn, serving as a heating coil. Quartz rings located at the ends of the heater have a height of 0.1-0.15N, an inner diameter of 1.2-1.3D and an outer diameter of 1.4-1.5D, a heater height hH is 1.1-1.2N, inner diameter 1.4-1.5D and outer diameter 1.6-1.7D, where H is the height of the substrate holder, and D is the outer diameter of the substrate holder.
EFFECT: invention provides for the creation of a uniform temperature field in the area of the location of the processed material and the convenience of assembly and maintenance of the heater.
1 cl, 3 dwg
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Authors
Dates
2021-12-13—Published
2021-07-01—Filed