PROCESS OF MANUFACTURE OF FILM RESISTORS Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: resistive film is applied to dielectric substrate, low-temperature cycling treatment is conducted for the course of 25-30 min by successive cooling of resistors in liquid nitrogen and cure in the air at room temperature. Time period of each operation is set equal to 30-60 s. After cyclic treatment baking of substrate is performed. EFFECT: specified sequence of operations makes it possible to increase output of good resistors, to diminish mechanical stresses, to increase structural stability and homogeneity of resistive films. 2 tbl