MATRIX-ADDRESSED OPTOELECTRONIC DEVICE AND ELECTRODE GRID FOR THIS DEVICE Russian patent published in 2006 - IPC H01L31/00 H01L31/02 G11C11/42 

Abstract RU 2272336 C2

FIELD: optoelectronics.

SUBSTANCE: proposed invention is concerned with devices and apparatuses incorporating functional components forming planar set wherein functional components are addressing through first electrode grid with flat strip electrodes contacting one end of functional components and through second electrode grid they are contacting similar electrodes positioned perpendicular to electrodes of first electrode grid and brought in contact with opposite end of functional component. In this way, so-called matrix-addressed device is formed. Proposed optoelectronic device has functional medium in the form of active material possessing optoelectronic properties and inserted in the form of solid layer between first and second electrode grids EG1 and EG2, each incorporating parallel strip electrodes 1 and 2. Electrodes 2 of second electrode grid EG2 are positioned at certain angle to electrodes 1 of first electrode grid EG1; functional components 5 are formed in three-dimensional areas of active material 3 corresponding to relative superposition of electrodes 1 of first electrode grid EG1 and electrodes 2 of second electrode grid EG2 contacting active material 3 to organize set of matrix-addressed functional components. These functional components correspond to optically active pixels 5 of display or pixels 5 of photodetector. Electrodes 1 and 2 are disposed in each of electrode grids EG1 and EG2 in the form of dense parallel configuration and are insulated from each other by means of thin film 6 whose thickness amounts only to a fraction of electrode width. As a result, either display characterized in high surface brightness and high resolving power or photodetector of high-sensitivity and high-resolving power can be produced.

EFFECT: enhanced volumetric efficiency of pixels in active material amounting to that close to unity and, hence, enhanced resolving power.

9 cl, 11 dwg

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RU 2 272 336 C2

Authors

Gudesen Khans Gude

Lejstad Gejrr I.

Nordal Per-Ehrik

Dates

2006-03-20Published

2002-11-01Filed