ELECTRODE MATRIX, METHOD FOR MANUFACTURING IT AND DEVICE FOR PROCESSING AND/OR STORING DATA Russian patent published in 2006 - IPC G11C11/22 

FIELD: engineering of devices, containing functional elements forming a planar set.

SUBSTANCE: in electrode matrix, containing first and second thin-film electrode layers L1, L2 with electrodes ε in form of stripe electric conductors in each layer, electrodes ε are separated from each other only by thin film 6 of electrically insulated material, thickness of which is a small portion of electrodes width and which passes along at least side edges of electrodes, forming isolating walls 6a between them. Electrode layers L1, L2 are subjected to planarization to provide for high level of planarity of layers. In dev, containing one or more electrode matrices EM, electrode layers L1, L2 of each matrix are mutually oriented in such a way, that their electrodes 1, 2 intersect or are positioned mutually perpendicularly. Between electrodes 1,2 in form of whole layer functional environment 3 is held, as a result of which device with matrix addressing is formed (preferably passive), which can be utilized, for example, as device for processing or storing data with matrix addressing, containing individually addressed functional elements 5, in form of logical cells or memory cells respectively. Coefficient of filling for separate layer of functional environment 3 by aforementioned cells is close to 1, while maximal number of cells in device approaches A/f², where A - surface area of functional environment, held between electrode layers L1, L2, and f - minimal size achievable by technological means.

EFFECT: increased efficiency of addressing and increased recording density of stored data.

3 cl, 30 dwg