MULTIFUNCTION LOGIC GATE BUILT AROUND CMIS TRANSISTORS Russian patent published in 2006 - IPC H03K19/01 H03K19/94 

Abstract RU 2275737 C1

FIELD: computer engineering.

SUBSTANCE: proposed device has NAND gates 1-3 with outputs 10-12, logic gates of first polarity of conductivity 4 and of second polarity of conductivity 5, clock transistors 6, 7, pre-charge transistor 8, power bus 9, neutral bus 13, clock bus 14, variable signal inputs 15-17, device outputs 21, 25, 26, 29, 32, as well as p transistors 18-20, 22-24 and n transistors 27, 28, 30, 31, 33. Such device implements five logic functions of six variables, including 2AND-OR, 2OR-AND, 2AND, 4AND, and 6AND. Other set of five logic functions can be implemented across same outputs of device by connecting p transistor gates of logic gates 4, 5 to outputs of NAND gates 1-3. NAND gates 1-3 may have more than two inputs and a few parallel-connected key circuits allowing for implementing multifunction logic device using great number of input variable signals.

EFFECT: enlarged functional capabilities.

1 cl, 1 dwg

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RU 2 275 737 C1

Authors

Lementuev Vladimir Anufrievich

Dates

2006-04-27Published

2004-12-06Filed