FIELD: electric engineering, in particular, methods for determining potentially unreliable integral circuits.
SUBSTANCE: method includes measuring dynamic consumption current before, after effect from electrostatic discharge and after temperature annealing. Effect by 5-10 pulses of electrostatic discharge of both signs lead to extreme allowed voltages in accordance to technical conditions. Temperature annealing is performed under temperature maximally allowed in accordance to technical conditions during 1-8 hours. Integral circuits are screened simultaneously by two criterions: IDst, IDesd>A; |IDann-IDst|>Δ; where IDst, IDesd, IDann - dynamic consumption currents, respectively, starting, after electrostatic discharge and after annealing. Values of dynamic consumption current A and differences of dynamic consumption currents Δ are set on representing selection for each type of circuits.
EFFECT: expanded functional capabilities, increased trustworthiness.
1 tbl, 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF REJECTION OF POTENTIAL UNRELIABLE INTEGRATED PRINTED CIRCUITS | 2005 |
|
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| PROCEDURE FOR REJECTION OF BIPOLAR TRANSISTORS | 2001 |
|
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| METHOD FOR SEPARATION OF INTEGRATED CIRCUITS BY RELIABILITY | 2021 |
|
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| SEPARATION METHOD OF SEMI-CONDUCTING ITEMS AS TO RELIABILITY | 2008 |
|
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| METHOD OF INTEGRATED CIRCUIT DIVISION UPON RELIABILITY CRITERION | 2006 |
|
RU2324194C1 |
| METHOD OF SELECTION OF HIGHLY RELIABLE INTEGRAL PRINTED CIRCUITS | 2005 |
|
RU2295735C1 |
| PROCEDURE ESTABLISHING POTENTIALLY UNRELIABLE SEMICONDUCTOR DEVICES | 2002 |
|
RU2230335C1 |
| MODE OF SEPARATION INTEGRAL SCHEMES ACCORDING TO RELIABILITY | 2005 |
|
RU2290652C2 |
| METHOD FOR SELECTING A GROUP OF HIGH RELIABILITY DEVICES FROM A BATCH OF VARIABLE CAPACITANCE DIODES | 2005 |
|
RU2303790C1 |
| METHOD FOR REJECTING SEMICONDUCTOR PRODUCTS WITH REDUCED RELIABILITY LEVEL | 2010 |
|
RU2484489C2 |
